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 JMnic
Product Specification
Silicon NPN Power Transistors
2N6836
DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits
PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 850 450 6 15 20 10 15 175 200 -65~200 ae ae UNIT V V V A A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT ae /W
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2N6836
SYMBOL
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ;IB=0
450
V
VCEsat-1
Collector-emitter saturation voltage
IC=5A; IB=0.7A IC=10A; IB=1.0A TC=100ae IC=10A; IB=1.0A TC=100ae VCE=850V; VBE=-1.5V TC=100ae VEB=6V; IC=0
1.2 2.5 3.0 1.5 1.5 0.25 1.5 1.0
V
VCEsat-2
Collector-emitter saturation voltage
V
VBEsat
Base-emitter saturation voltage
V
ICEV
Collector cut-off current
mA
IEBO
Emitter cut-off current
mA
hFE-1
DC current gain
IC=10A ; VCE=5V
8
30
hFE-2
DC current gain
IC=15A ; VCE=5V
5
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
50
400
pF
fT
Transition frequency
IC=0.25A ; VCE=10V;f=10MHz
10
75
MHz
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6836
Fig.2 outline dimensions (unindicated tolerance:A
0.1mm)
3


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